JPS6068710A - 圧電薄膜共振子 - Google Patents
圧電薄膜共振子Info
- Publication number
- JPS6068710A JPS6068710A JP17627083A JP17627083A JPS6068710A JP S6068710 A JPS6068710 A JP S6068710A JP 17627083 A JP17627083 A JP 17627083A JP 17627083 A JP17627083 A JP 17627083A JP S6068710 A JPS6068710 A JP S6068710A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- sealing body
- thin film
- vibrator support
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- 238000007789 sealing Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000009423 ventilation Methods 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000003068 static effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 238000003672 processing method Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17627083A JPS6068710A (ja) | 1983-09-26 | 1983-09-26 | 圧電薄膜共振子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17627083A JPS6068710A (ja) | 1983-09-26 | 1983-09-26 | 圧電薄膜共振子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6068710A true JPS6068710A (ja) | 1985-04-19 |
| JPH02888B2 JPH02888B2 (en]) | 1990-01-09 |
Family
ID=16010631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17627083A Granted JPS6068710A (ja) | 1983-09-26 | 1983-09-26 | 圧電薄膜共振子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068710A (en]) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63120481A (ja) * | 1986-11-10 | 1988-05-24 | Matsushita Electric Ind Co Ltd | 薄膜ハイブリツドｉｃ |
| WO1998052280A1 (fr) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a couche mince piezo-electrique |
| US7113055B2 (en) | 2003-11-07 | 2006-09-26 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezoelectric resonator |
| US7230367B2 (en) | 2003-11-07 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, production method thereof, filter, duplexer, and communication device |
| US7242130B2 (en) | 2003-11-07 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
| JP2009049359A (ja) * | 2007-07-25 | 2009-03-05 | Ngk Insulators Ltd | 圧電／電歪素子及び圧電／電歪素子の製造方法 |
| JP2010035059A (ja) * | 2008-07-30 | 2010-02-12 | Tdk Corp | 電子デバイス |
| JP2010062642A (ja) * | 2008-09-01 | 2010-03-18 | Tdk Corp | 薄膜バルク波共振器 |
| JPWO2010007805A1 (ja) * | 2008-07-17 | 2012-01-05 | 株式会社村田製作所 | 分波器 |
| US20170063334A1 (en) * | 2015-08-27 | 2017-03-02 | Disco Corporation | Baw device and method of manufacturing baw device |
| WO2022080433A1 (ja) * | 2020-10-14 | 2022-04-21 | 株式会社村田製作所 | 弾性波装置及び弾性波装置の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0531491U (ja) * | 1991-09-27 | 1993-04-23 | アイワ株式会社 | インナーイヤヘツドホン |
-
1983
- 1983-09-26 JP JP17627083A patent/JPS6068710A/ja active Granted
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63120481A (ja) * | 1986-11-10 | 1988-05-24 | Matsushita Electric Ind Co Ltd | 薄膜ハイブリツドｉｃ |
| WO1998052280A1 (fr) * | 1997-05-13 | 1998-11-19 | Mitsubishi Denki Kabushiki Kaisha | Dispositif a couche mince piezo-electrique |
| US6271619B1 (en) | 1997-05-13 | 2001-08-07 | Mitsubishi Denki Kabushiki Kaisha | Piezoelectric thin film device |
| US7477115B2 (en) | 2003-11-07 | 2009-01-13 | Panasonic Corporation | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezoelectric resonator |
| US7230367B2 (en) | 2003-11-07 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, production method thereof, filter, duplexer, and communication device |
| US7242130B2 (en) | 2003-11-07 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
| US7113055B2 (en) | 2003-11-07 | 2006-09-26 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric resonator, method of manufacturing piezoelectric resonator, and filter, duplexer, and communication device using piezoelectric resonator |
| JP2009049359A (ja) * | 2007-07-25 | 2009-03-05 | Ngk Insulators Ltd | 圧電／電歪素子及び圧電／電歪素子の製造方法 |
| JPWO2010007805A1 (ja) * | 2008-07-17 | 2012-01-05 | 株式会社村田製作所 | 分波器 |
| JP2010035059A (ja) * | 2008-07-30 | 2010-02-12 | Tdk Corp | 電子デバイス |
| JP2010062642A (ja) * | 2008-09-01 | 2010-03-18 | Tdk Corp | 薄膜バルク波共振器 |
| US20170063334A1 (en) * | 2015-08-27 | 2017-03-02 | Disco Corporation | Baw device and method of manufacturing baw device |
| US10050599B2 (en) * | 2015-08-27 | 2018-08-14 | Disco Corporation | BAW device and method of manufacturing BAW device |
| WO2022080433A1 (ja) * | 2020-10-14 | 2022-04-21 | 株式会社村田製作所 | 弾性波装置及び弾性波装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02888B2 (en]) | 1990-01-09 |
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